"""Transistor components for IHP PDK."""
import gdsfactory as gf
from gdsfactory import Component
from gdsfactory.typings import LayerSpec
[docs]
@gf.cell
def nmos(
width: float = 1.0,
length: float = 0.13,
nf: int = 1,
m: int = 1,
model: str = "sg13_lv_nmos",
layer_gatpoly: LayerSpec = "GatPolydrawing",
layer_activ: LayerSpec = "Activdrawing",
layer_nsd: LayerSpec = "nSDdrawing",
layer_cont: LayerSpec = "Contdrawing",
layer_metal1: LayerSpec = "Metal1drawing",
) -> Component:
"""Create an NMOS transistor.
Args:
width: Total width of the transistor in micrometers.
length: Gate length in micrometers.
nf: Number of fingers.
m: Multiplier (number of parallel devices).
model: Device model name.
layer_gatpoly: Gate polysilicon layer.
layer_activ: Active region layer.
layer_nsd: N+ source/drain implant layer.
layer_cont: Contact layer.
layer_metal1: Metal1 layer.
Returns:
Component with NMOS transistor layout.
"""
c = Component()
# Design rules
gate_min_width = 0.15
gate_min_length = 0.13
cont_size = 0.16
cont_spacing = 0.18
cont_gate_spacing = 0.14
cont_enc_active = 0.07
cont_enc_metal = 0.06
poly_extension = 0.18
active_extension = 0.23
psd_enclosure = 0.12
# Calculate dimensions
gate_width = max(width / nf, gate_min_width)
gate_length = max(length, gate_min_length)
# Grid snap
grid = 0.005
gate_width = round(gate_width / grid) * grid
gate_length = round(gate_length / grid) * grid
# Create transistor fingers
finger_pitch = gate_width + 2 * cont_gate_spacing + cont_size
for i in range(nf):
x_offset = i * finger_pitch
# Gate poly
gate = gf.components.rectangle(
size=(gate_length, gate_width + 2 * poly_extension),
layer=layer_gatpoly,
)
gate_ref = c.add_ref(gate)
gate_ref.movex(x_offset)
# Active region
active_width = gate_width
active_length = gate_length + 2 * active_extension
active = gf.components.rectangle(
size=(active_length, active_width),
layer=layer_activ,
)
active_ref = c.add_ref(active)
active_ref.move((x_offset - active_extension, poly_extension))
# Source/Drain contacts
# Calculate number of contacts
n_cont_y = int((active_width - cont_size) / cont_spacing) + 1
# Source contacts (left)
for j in range(n_cont_y):
y_pos = poly_extension + j * cont_spacing
cont = gf.components.rectangle(
size=(cont_size, cont_size),
layer=layer_cont,
)
cont_ref = c.add_ref(cont)
cont_ref.move((x_offset - active_extension + cont_enc_active, y_pos))
# Metal1 for source
m1 = gf.components.rectangle(
size=(cont_size + 2 * cont_enc_metal, cont_size + 2 * cont_enc_metal),
layer=layer_metal1,
)
m1_ref = c.add_ref(m1)
m1_ref.move(
(
x_offset - active_extension + cont_enc_active - cont_enc_metal,
y_pos - cont_enc_metal,
)
)
# Drain contacts (right)
for j in range(n_cont_y):
y_pos = poly_extension + j * cont_spacing
cont = gf.components.rectangle(
size=(cont_size, cont_size),
layer=layer_cont,
)
cont_ref = c.add_ref(cont)
cont_ref.move((x_offset + gate_length + cont_gate_spacing, y_pos))
# Metal1 for drain
m1 = gf.components.rectangle(
size=(cont_size + 2 * cont_enc_metal, cont_size + 2 * cont_enc_metal),
layer=layer_metal1,
)
m1_ref = c.add_ref(m1)
m1_ref.move(
(
x_offset + gate_length + cont_gate_spacing - cont_enc_metal,
y_pos - cont_enc_metal,
)
)
# N+ implant
nsd = gf.components.rectangle(
size=(nf * finger_pitch + active_extension, gate_width + 2 * psd_enclosure),
layer=layer_nsd,
)
nsd_ref = c.add_ref(nsd)
nsd_ref.move((-active_extension - psd_enclosure, poly_extension - psd_enclosure))
# Add ports
c.add_port(
name="G",
center=(nf * finger_pitch / 2, -poly_extension),
width=gate_length,
orientation=270,
layer=layer_gatpoly,
port_type="electrical",
)
c.add_port(
name="S",
center=(-active_extension, gate_width / 2 + poly_extension),
width=gate_width,
orientation=180,
layer=layer_metal1,
port_type="electrical",
)
c.add_port(
name="D",
center=(gate_length + active_extension, gate_width / 2 + poly_extension),
width=gate_width,
orientation=0,
layer=layer_metal1,
port_type="electrical",
)
# Add metadata
c.info["model"] = model
c.info["width"] = width
c.info["length"] = length
c.info["nf"] = nf
c.info["m"] = m
c.info["type"] = "nmos"
return c
[docs]
@gf.cell
def pmos(
width: float = 1.0,
length: float = 0.13,
nf: int = 1,
m: int = 1,
model: str = "sg13_lv_pmos",
layer_nwell: LayerSpec = "NWelldrawing",
layer_gatpoly: LayerSpec = "GatPolydrawing",
layer_activ: LayerSpec = "Activdrawing",
layer_psd: LayerSpec = "pSDdrawing",
layer_cont: LayerSpec = "Contdrawing",
layer_metal1: LayerSpec = "Metal1drawing",
) -> Component:
"""Create a PMOS transistor.
Args:
width: Total width of the transistor in micrometers.
length: Gate length in micrometers.
nf: Number of fingers.
m: Multiplier (number of parallel devices).
model: Device model name.
layer_nwell: N-well layer.
layer_gatpoly: Gate polysilicon layer.
layer_activ: Active region layer.
layer_psd: P+ source/drain implant layer.
layer_cont: Contact layer.
layer_metal1: Metal1 layer.
Returns:
Component with PMOS transistor layout.
"""
c = Component()
# Design rules
gate_min_width = 0.15
gate_min_length = 0.13
cont_size = 0.16
cont_spacing = 0.18
cont_gate_spacing = 0.14
cont_enc_active = 0.07
cont_enc_metal = 0.06
poly_extension = 0.18
active_extension = 0.23
nwell_enclosure = 0.31
psd_enclosure = 0.12
# Calculate dimensions
gate_width = max(width / nf, gate_min_width)
gate_length = max(length, gate_min_length)
# Grid snap
grid = 0.005
gate_width = round(gate_width / grid) * grid
gate_length = round(gate_length / grid) * grid
# N-Well
nwell_width = gate_width + 2 * nwell_enclosure
nwell_length = gate_length + 2 * active_extension + 2 * nwell_enclosure
nwell = gf.components.rectangle(
size=(nwell_length * nf, nwell_width),
layer=layer_nwell,
)
nwell_ref = c.add_ref(nwell)
nwell_ref.move(
(-active_extension - nwell_enclosure, poly_extension - nwell_enclosure)
)
# Create transistor fingers
finger_pitch = gate_width + 2 * cont_gate_spacing + cont_size
for i in range(nf):
x_offset = i * finger_pitch
# Gate poly
gate = gf.components.rectangle(
size=(gate_length, gate_width + 2 * poly_extension),
layer=layer_gatpoly,
)
gate_ref = c.add_ref(gate)
gate_ref.movex(x_offset)
# Active region
active_width = gate_width
active_length = gate_length + 2 * active_extension
active = gf.components.rectangle(
size=(active_length, active_width),
layer=layer_activ,
)
active_ref = c.add_ref(active)
active_ref.move((x_offset - active_extension, poly_extension))
# Source/Drain contacts
n_cont_y = int((active_width - cont_size) / cont_spacing) + 1
# Source contacts (left)
for j in range(n_cont_y):
y_pos = poly_extension + j * cont_spacing
cont = gf.components.rectangle(
size=(cont_size, cont_size),
layer=layer_cont,
)
cont_ref = c.add_ref(cont)
cont_ref.move((x_offset - active_extension + cont_enc_active, y_pos))
# Metal1 for source
m1 = gf.components.rectangle(
size=(cont_size + 2 * cont_enc_metal, cont_size + 2 * cont_enc_metal),
layer=layer_metal1,
)
m1_ref = c.add_ref(m1)
m1_ref.move(
(
x_offset - active_extension + cont_enc_active - cont_enc_metal,
y_pos - cont_enc_metal,
)
)
# Drain contacts (right)
for j in range(n_cont_y):
y_pos = poly_extension + j * cont_spacing
cont = gf.components.rectangle(
size=(cont_size, cont_size),
layer=layer_cont,
)
cont_ref = c.add_ref(cont)
cont_ref.move((x_offset + gate_length + cont_gate_spacing, y_pos))
# Metal1 for drain
m1 = gf.components.rectangle(
size=(cont_size + 2 * cont_enc_metal, cont_size + 2 * cont_enc_metal),
layer=layer_metal1,
)
m1_ref = c.add_ref(m1)
m1_ref.move(
(
x_offset + gate_length + cont_gate_spacing - cont_enc_metal,
y_pos - cont_enc_metal,
)
)
# P+ implant
psd = gf.components.rectangle(
size=(nf * finger_pitch + active_extension, gate_width + 2 * psd_enclosure),
layer=layer_psd,
)
psd_ref = c.add_ref(psd)
psd_ref.move((-active_extension - psd_enclosure, poly_extension - psd_enclosure))
# Add ports
c.add_port(
name="G",
center=(nf * finger_pitch / 2, -poly_extension),
width=gate_length,
orientation=270,
layer=layer_gatpoly,
port_type="electrical",
)
c.add_port(
name="S",
center=(-active_extension, gate_width / 2 + poly_extension),
width=gate_width,
orientation=180,
layer=layer_metal1,
port_type="electrical",
)
c.add_port(
name="D",
center=(gate_length + active_extension, gate_width / 2 + poly_extension),
width=gate_width,
orientation=0,
layer=layer_metal1,
port_type="electrical",
)
# Add metadata
c.info["model"] = model
c.info["width"] = width
c.info["length"] = length
c.info["nf"] = nf
c.info["m"] = m
c.info["type"] = "pmos"
return c
[docs]
@gf.cell
def nmos_hv(
width: float = 1.0,
length: float = 0.45,
nf: int = 1,
m: int = 1,
model: str = "sg13_hv_nmos",
layer_thickgateox: LayerSpec = "ThickGateOxdrawing",
layer_gatpoly: LayerSpec = "GatPolydrawing",
layer_activ: LayerSpec = "Activdrawing",
layer_nsd: LayerSpec = "nSDdrawing",
layer_cont: LayerSpec = "Contdrawing",
layer_metal1: LayerSpec = "Metal1drawing",
) -> Component:
"""Create a high-voltage NMOS transistor.
Args:
width: Total width of the transistor in micrometers.
length: Gate length in micrometers.
nf: Number of fingers.
m: Multiplier (number of parallel devices).
model: Device model name.
layer_thickgateox: Thick gate oxide layer.
layer_gatpoly: Gate polysilicon layer.
layer_activ: Active region layer.
layer_nsd: N+ source/drain implant layer.
layer_cont: Contact layer.
layer_metal1: Metal1 layer.
Returns:
Component with HV NMOS transistor layout.
"""
c = Component()
# Add base nmos as reference
nmos_ref = c << nmos(
width=width,
length=length,
nf=nf,
m=m,
model=model,
layer_gatpoly=layer_gatpoly,
layer_activ=layer_activ,
layer_nsd=layer_nsd,
layer_cont=layer_cont,
layer_metal1=layer_metal1,
)
# Add thick gate oxide layer
thick_ox = gf.components.rectangle(
size=(length + 0.5, width + 0.5),
layer=layer_thickgateox,
centered=True,
)
c.add_ref(thick_ox)
# Copy ports from base nmos
c.add_ports(nmos_ref.ports)
c.info["type"] = "nmos_hv"
return c
[docs]
@gf.cell
def pmos_hv(
width: float = 1.0,
length: float = 0.45,
nf: int = 1,
m: int = 1,
model: str = "sg13_hv_pmos",
layer_thickgateox: LayerSpec = "ThickGateOxdrawing",
layer_nwell: LayerSpec = "NWelldrawing",
layer_gatpoly: LayerSpec = "GatPolydrawing",
layer_activ: LayerSpec = "Activdrawing",
layer_psd: LayerSpec = "pSDdrawing",
layer_cont: LayerSpec = "Contdrawing",
layer_metal1: LayerSpec = "Metal1drawing",
) -> Component:
"""Create a high-voltage PMOS transistor.
Args:
width: Total width of the transistor in micrometers.
length: Gate length in micrometers.
nf: Number of fingers.
m: Multiplier (number of parallel devices).
model: Device model name.
layer_thickgateox: Thick gate oxide layer.
layer_nwell: N-well layer.
layer_gatpoly: Gate polysilicon layer.
layer_activ: Active region layer.
layer_psd: P+ source/drain implant layer.
layer_cont: Contact layer.
layer_metal1: Metal1 layer.
Returns:
Component with HV PMOS transistor layout.
"""
c = Component()
# Add base pmos as reference
pmos_ref = c << pmos(
width=width,
length=length,
nf=nf,
m=m,
model=model,
layer_nwell=layer_nwell,
layer_gatpoly=layer_gatpoly,
layer_activ=layer_activ,
layer_psd=layer_psd,
layer_cont=layer_cont,
layer_metal1=layer_metal1,
)
# Add thick gate oxide layer
thick_ox = gf.components.rectangle(
size=(length + 0.5, width + 0.5),
layer=layer_thickgateox,
centered=True,
)
c.add_ref(thick_ox)
# Copy ports from base pmos
c.add_ports(pmos_ref.ports)
c.info["type"] = "pmos_hv"
return c
[docs]
@gf.cell
def rfnmos(
width: float = 2.0,
length: float = 0.13,
nf: int = 2,
m: int = 1,
model: str = "sg13_lv_rfnmos",
layer_gatpoly: LayerSpec = "GatPolydrawing",
layer_activ: LayerSpec = "Activdrawing",
layer_nsd: LayerSpec = "nSDdrawing",
layer_cont: LayerSpec = "Contdrawing",
layer_metal1: LayerSpec = "Metal1drawing",
) -> Component:
"""Create an RF NMOS transistor with optimized layout.
Args:
width: Total width of the transistor in micrometers.
length: Gate length in micrometers.
nf: Number of fingers (should be even for RF).
m: Multiplier (number of parallel devices).
model: Device model name.
layer_gatpoly: Gate polysilicon layer.
layer_activ: Active region layer.
layer_nsd: N+ source/drain implant layer.
layer_cont: Contact layer.
layer_metal1: Metal1 layer.
Returns:
Component with RF NMOS transistor layout.
"""
# Ensure even number of fingers for RF layout
if nf % 2 != 0:
nf = nf + 1
c = Component()
# Add base nmos as reference
nmos_ref = c << nmos(
width=width,
length=length,
nf=nf,
m=m,
model=model,
layer_gatpoly=layer_gatpoly,
layer_activ=layer_activ,
layer_nsd=layer_nsd,
layer_cont=layer_cont,
layer_metal1=layer_metal1,
)
# Add substrate shielding for RF
shield_layer = (37, 0) # Example shield layer
shield = gf.components.rectangle(
size=(length * nf * 1.5, width * 1.2),
layer=shield_layer,
centered=True,
)
c.add_ref(shield)
# Copy ports from base nmos
c.add_ports(nmos_ref.ports)
c.info["type"] = "rfnmos"
return c
[docs]
@gf.cell
def rfpmos(
width: float = 2.0,
length: float = 0.13,
nf: int = 2,
m: int = 1,
model: str = "sg13_lv_rfpmos",
layer_nwell: LayerSpec = "NWelldrawing",
layer_gatpoly: LayerSpec = "GatPolydrawing",
layer_activ: LayerSpec = "Activdrawing",
layer_psd: LayerSpec = "pSDdrawing",
layer_cont: LayerSpec = "Contdrawing",
layer_metal1: LayerSpec = "Metal1drawing",
) -> Component:
"""Create an RF PMOS transistor with optimized layout.
Args:
width: Total width of the transistor in micrometers.
length: Gate length in micrometers.
nf: Number of fingers (should be even for RF).
m: Multiplier (number of parallel devices).
model: Device model name.
layer_nwell: N-well layer.
layer_gatpoly: Gate polysilicon layer.
layer_activ: Active region layer.
layer_psd: P+ source/drain implant layer.
layer_cont: Contact layer.
layer_metal1: Metal1 layer.
Returns:
Component with RF PMOS transistor layout.
"""
# Ensure even number of fingers for RF layout
if nf % 2 != 0:
nf = nf + 1
c = Component()
# Add base pmos as reference
pmos_ref = c << pmos(
width=width,
length=length,
nf=nf,
m=m,
model=model,
layer_nwell=layer_nwell,
layer_gatpoly=layer_gatpoly,
layer_activ=layer_activ,
layer_psd=layer_psd,
layer_cont=layer_cont,
layer_metal1=layer_metal1,
)
# Add substrate shielding for RF
shield_layer = (37, 0) # Example shield layer
shield = gf.components.rectangle(
size=(length * nf * 1.5, width * 1.2),
layer=shield_layer,
centered=True,
)
c.add_ref(shield)
# Copy ports from base pmos
c.add_ports(pmos_ref.ports)
c.info["type"] = "rfpmos"
return c
if __name__ == "__main__":
from gdsfactory.difftest import xor
from ihp import PDK
from ihp.cells import fixed
PDK.activate()
# Test the components
c0 = fixed.nmos() # original
c1 = nmos() # New
# c = gf.grid([c0, c1], spacing=100)
c = xor(c0, c1)
c.show()
# c0 = cells.pmos() # original
# c1 = pmos() # New
# # c = gf.grid([c0, c1], spacing=100)
# c = xor(c0, c1)
# c.show()
# c0 = cells.rfnmos() # original
# c1 = rfnmos() # New
# # c = gf.grid([c0, c1], spacing=100)
# c = xor(c0, c1)
# c.show()
