sky130.pcells.sky130_fd_pr__esd_nfet_01v8

sky130.pcells.sky130_fd_pr__esd_nfet_01v8#

sky130.pcells.sky130_fd_pr__esd_nfet_01v8(gate_width=20.0, gate_length=0.15, sd_width=0.28, nf=4, guard_ring=True, end_cap=0.13)[source]#

ESD protection 1.8V NMOS (sky130_fd_pr__esd_nfet_01v8).

Large multi-finger NMOS optimised for ESD current handling. Geometry follows the standard sky130 MOSFET construction but adds the areaidesd (81, 19) marker layer over the entire device area.

Parameters:

  • gate_width (float) – transistor width (um); large default (20 um) for ESD.

  • gate_length (float) – gate poly length (um) in the direction of current flow.

  • sd_width (float) – source/drain contact region width (um).

  • nf (int) – number of gate fingers; default 4 for ESD current spreading.

  • guard_ring (bool) – if True, add a pwell (P+ substrate) guard ring.

  • end_cap (float) – poly extension beyond diffusion edge (um).

Return type:

Component